Electric pulse therapy instrument seven

Circuit Operation Principle The electric pulse therapy device circuit consists of an oscillator, an electrical pulse generator and a power supply circuit, as shown in Figure 9-7.

The oscillator circuit is composed of a time base integrated circuit IC, resistors R1, R2, potentiometers RP1, R and capacitors Cl, C2.
The electric pulse generator circuit is composed of resistors R3-R5, transistors V1, V2, pulse transformer T, capacitor C4, diode VD, potentiometer RP3, and electrodes a, b.
The power circuit is composed of a power switch S, a battery GB, a current limiting resistor R6, a light emitting diode VL, and a smoothing capacitor C3.
Turn on the power switch S, GB provides 9V DC working voltage for the oscillator and pulse generator circuit, and VLA is illuminated after R6 current limiting.
After the oscillator is energized, it oscillates. The low frequency pulse signal with adjustable frequency is output from the 3 pin of the IC, so that Vl and V2 are turned on intermittently, and a pulse voltage is generated on the W2 winding of T. After the pulse voltage is controlled by the RP3 limit, the electrodes a and b are applied to the acupuncture points of the human body to assist the chronic diseases such as periarthritis of the shoulder and arthritis.
Adjusting the resistance of RP1 and RP2 can change the oscillation frequency of the oscillator.
Adjusting the resistance of RP3 can change the stimulation level of electric pulse.
Component selection
Rl-R6 uses 1/4W metal film resistor or carbon film resistor.
RPl and RP2 use small synthetic carbon film potentiometer or variable resistor; RP3 selects small synthetic carbon film potentiometer with switch (power switch S).
Both Cl and C3 use aluminum electrolytic capacitors with a withstand voltage of 16V; C2 uses monolithic capacitors or polyester capacitors; C4 uses CBB capacitors.
VD selects 1N4007 silicon rectifier diode for use.
VL uses φ5mm green LED.
Vl selects S9013 type silicon NPN transistor for use; V2 selects S8550 type silicon PNP transistor for use.
The IC uses NE555 or CD7555 time base integrated circuit.
T is made of EII2 core and high-strength enameled wire: winding W1 is wound with l0-15匝 with φO.25mm enameled wire, and winding WZ is wound with 100~140匝 with φ0.1mm enameled wire.
GB uses a 9V laminated battery or uses a small DC regulated power supply.

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